Research Programs in the NIST Materials Reliability Division:
Reliability of Dimensionally-Constrained Materials
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Program-level objectives include:
This program comprises on-going projects in: - Electrical Methods for Mechanical Testing of Thin Films and Interconnects, |
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Electrical Methods for Mechanical Testing of Thin Films and Interconnects. The primary goal of this project is the development of electrical test methods for the mechanical properties and reliability of dimensionally-constrained materials such as films and interconnects, with present emphases on measurements of thermal fatigue and strength; a secondary goal is the development of microstructure-based lifetime prediction models using our measurements. To develop such methods and models, we also further the necessary materials science understanding of mechanical behavior in these materials. Specific
This test method is based on the application of controlled joule heating to films and interconnects. Conditions are such that electromigration does not take place. Rather, heat is generated and dissipated within each power cycle. Cyclic thermal strain (De) is caused by the mismatch in coefficient of thermal expansion (Da) between the film/interconnect and the surrounding materials, due to a temperature change (DT):
The cyclic thermal strain causes plastic deformation within each power cycle. This is manifested as damage to an unprotected film surface (figure 1 - left) as well as crystallographic orientation changes of certain grains (figure 1 - right). We have also observed the growth of some grains during stressing. Quantitative measurements of orientation changes are shown in figure 2. Grains that deform tend to rotate towards a <112> or <113> orientation, which is consistent with slip asymmetries in tension-compression loading of fcc crystals. Lifetime plots such as that shown in figure 3 are consistent with what might be expected for behavior of bulk copper or aluminum. However, the thermal nature of this type of straining leads to somewhat different slopes from those seen in purely mechanical tests. Concurrent efforts are underway to develop both the quantitative measurement methodologies and the underlying materials science to explain both the measurements and the unusual nature of deformation of dimensionally-constrained materials.
Contact: Bob Keller, (303) 497-7651, email Publications associated with this work: 6. R. R. Keller, R. Geiss, Y. -W. Cheng, and D. T. Read, "Electric Current Induced Thermomechanical Fatigue Testing of Interconnects," Proc. Conference on Characterization and Metrology for ULSI Technology 2005, AIP vol. 788, 491-495 (2005). (see poster also).
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High Resolution Strain Measurements in the SEM. The goal of this project is to develop methods for measuring elastic strain from regions smaller than 50 nm, with better than 0.1 % strain resolution. These methods may be amenable to scanning within the SEM, possibly enabling automated strain mapping. Specific project objectives during FY06:
The approach uses an integrated combination of the SEM-based methods of electron backscatter diffraction (EBSD), Kossel microdiffraction, and pseudo-Kossel microdiffraction. All three techniques are diffraction methods and they make use of the fact that lattice parameters can be determined by measuring the spatial variation in scattering from a crystal. The methods have fundamentally different information volumes of scattering, forming the possibility of strain mapping in three dimensions. Furthermore, because of the inherently divergent scattering from the specimen, each pattern contains information about all three dimensions. Figure 4 shows schematics of the diffraction methods, along with their approximate spatial and strain resolutions. Figure 5 shows an example of a high resolution strain map obtained by use of automated EBSD. The specimen in this example is a multilayer structure of GaAs/AlGaAs, with an oxide layer between the two central GaAs layers.
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Last modified on May 05, 2006
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