Research Programs in the NIST Materials Reliability Division:

Reliability of Dimensionally-Constrained Materials

We perform research benefiting those interested in materials for the microelectronics, optoelectronics, and nanomaterials industries. Our efforts concentrate on the effects of dimensional constraints on mechanical performance and reliability. A common theme to the work rests with the ties between materials behavior and materials microstructure, since microstructure is often inherently different when processed for very small-scale applications.

Program-level objectives include:

  • Develop test methodologies for mechanical reliability of dimensionally constrained materials;

  • Develop electrical methods for mechanical characterization;

  • Integrate microtensile, nanoindentation, electrical testing methods for mechanical characterization;

  • Advance materials science understanding of mechanical behavior in order to further measurement development and to formulate predictive models of behavior, based on test results.

This program comprises on-going projects in:

- Electrical Methods for Mechanical Testing of Thin Films and Interconnects,

- High Resolution Strain Measurements in the SEM.


Electrical Methods for Mechanical Testing of Thin Films and Interconnects. The primary goal of this project is the development of electrical test methods for the mechanical properties and reliability of dimensionally-constrained materials such as films and interconnects, with present emphases on measurements of thermal fatigue and strength; a secondary goal is the development of microstructure-based lifetime prediction models using our measurements. To develop such methods and models, we also further the necessary materials science understanding of mechanical behavior in these materials.

Specific project objectives during FY06:

  • Develop an electrical test to measure thermal fatigue lifetime:

    • Measure and control temperature;

    • Detect onset of open circuit failure;

    • Demonstrate influence of overlayers on lifetime;

    • Compare to fatigue data obtained by microtensile testing;

    • Devise predictive model for lifetime (based on grain size, texture).

  • Develop electrical test to measure sys and sUTS:

    • Detect and monitor onset of plasticity electrically;

    • Extrapolate fatigue data to single cycle (by way of low cycle fatigue rules);

    • Compare to properties measured by microtensile testing.

  • Conduct end user-oriented round-robin test of nanoindentation-determined hardness and modulus:

    • Secure industry and academic participation;

    • Summarize and quantify uncertainties and their sources;

    • Compare to properties measured by microtensile testing.

This test method is based on the application of controlled joule heating to films and interconnects. Conditions are such that electromigration does not take place. Rather, heat is generated and dissipated within each power cycle. Cyclic thermal strain (De) is caused by the mismatch in coefficient of thermal expansion (Da) between the film/interconnect and the surrounding materials, due to a temperature change (DT):

For further details about the test method, please see reference 3 below.

The cyclic thermal strain causes plastic deformation within each power cycle. This is manifested as damage to an unprotected film surface (figure 1 - left) as well as crystallographic orientation changes of certain grains (figure 1 - right). We have also observed the growth of some grains during stressing. Quantitative measurements of orientation changes are shown in figure 2. Grains that deform tend to rotate towards a <112> or <113> orientation, which is consistent with slip asymmetries in tension-compression loading of fcc crystals. Lifetime plots such as that shown in figure 3 are consistent with what might be expected for behavior of bulk copper or aluminum. However, the thermal nature of this type of straining leads to somewhat different slopes from those seen in purely mechanical tests. 

Concurrent efforts are underway to develop both the quantitative measurement methodologies and the underlying materials science to explain both the measurements and the unusual nature of deformation of dimensionally-constrained materials.

 

Contact: Bob Keller, (303) 497-7651, email

Publications associated with this work:

1. R. R. Keller, R. Mönig, C. A. Volkert, C. Arzt, R. Schwaiger, and O. Kraft, "Interconnect failure due to cyclic loading," Stress-Induced Phenomena in Metallizations: 6th Int'l. Workshop, eds. S. P. Baker, M. A. Korhonen, E. Arzt, and P. S. Ho, AIP Conf. Proceedings vol. 612, AIP, Melville, NY, pp. 119-132, 2002.

2. R. H. Geiss, A. Roshko, K. A. Bertness, and R. R. Keller. “Electron backscatter diffraction for studies of localized deformation.” Electron Microscopy: Its role in materials science, pp. 329–336 Eds. J.R. Weertman, M. Fine, K. Faber, W. King, and P. Liaw. Warrendale, PA: TMS Conference Proceedings, 2003.

3. R. Mönig, R. R. Keller, and C. A. Volkert, "Thermal fatigue testing of thin metal films," Rev. Sci. Instrum., 75, 4997-5004 (2004).

4. R. R. Keller, R. H. Geiss, Y. -W. Cheng, and D. T. Read, "Microstructure Evolution during Alternating-Current-Induced Fatigue," Proc. IMECE 2004: 2004 ASME Int'l Mech. Eng. Cong., paper IMECE2004-61291, (2004).

5. R. R. Keller, R. H. Geiss, Y. -W. Cheng, and D. T. Read, "Microstructure Evolution during Electric Current Induced Thermomechanical Fatigue of Interconnects," Materials Research Society Symp. Proc.: Materials, Technology, and Reliability of Advanced Interconnects, vol. 863, pp. 295-300 (2005).

6. R. R. Keller, R. Geiss, Y. -W. Cheng, and D. T. Read, "Electric Current Induced Thermomechanical Fatigue Testing of Interconnects," Proc. Conference on Characterization and Metrology for ULSI Technology 2005, AIP vol. 788, 491-495 (2005). (see poster also).

7. R. R. Keller, C. A. Volkert, R. H. Geiss, A. J. Slifka, D. T. Read, N. Barbosa III, and R. Mönig, "Electrical Methods for Mechanical Characterization of Interconnect Thin Films," Proc. Advanced Metallization Conf. 2005, Colorado Springs, CO, in press.

 

 

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Figure 1. SEM and EBSD results of quasi in situ thermal fatigue test, induced by sinusoidal a.c. stressing at a current density of 12.2 MA/cm2 and a frequency of 100 Hz. Specimen was characterized, then tested, and the same locations characterized, etc. SEM images show time evolution of surface damage, while EBSD maps show time evolution of grain structure and orientations; times shown are accumulated stressing time. Orientation shown represents crystallographic directions normal to specimen surface. Grains A and B show both grain growth and reorientation.

Figure 2. Inverse pole figure showing surface normal orientations before and after a.c. stressing. Blue dots represent orientations prior to stressing, and red dots represent orientations of severely deformed regions after stressing. Black dots along IPF edges indicate 10° increments.

Figure 3. Applied current density versus time to open circuit for Cu and Al-1Si. Data point from quasi in situ test is shown in green. Vertical bars represent 0.3 MA/cm2 uncertainty.

High Resolution Strain Measurements in the SEM. The goal of this project is to develop methods for measuring elastic strain from regions smaller than 50 nm, with better than 0.1 % strain resolution. These methods may be amenable to scanning within the SEM, possibly enabling automated strain mapping.

Specific project objectives during FY06:

  • Determine feasible methods for spatially-resolved X-ray detection;

  • Extract lattice parameters from EBSD and Kossel patterns;

  • Develop methods for automating pattern detection;

  • Estimate sampling volumes.

The approach uses an integrated combination of the SEM-based methods of electron backscatter diffraction (EBSD), Kossel microdiffraction, and pseudo-Kossel microdiffraction. All three techniques are diffraction methods and they make use of the fact that lattice parameters can be determined by measuring the spatial variation in scattering from a crystal. The methods have fundamentally different information volumes of scattering, forming the possibility of strain mapping in three dimensions. Furthermore, because of the inherently divergent scattering from the specimen, each pattern contains information about all three dimensions.

Figure 4 shows schematics of the diffraction methods, along with their approximate spatial and strain resolutions. Figure 5 shows an example of a high resolution strain map obtained by use of automated EBSD. The specimen in this example is a multilayer structure of GaAs/AlGaAs, with an oxide layer between the two central GaAs layers.

 

Contact: Roy Geiss, (303) 497-4367, email

Publications associated with this work:

1. Geiss, R. H., A. Roshko, K. A. Bertness, and R. R. Keller. “Electron backscatter diffraction for studies of localized deformation.” Electron Microscopy: Its role in materials science, pp. 329–336 Eds. J.R. Weertman, M. Fine, K. Faber, W. King, and P. Liaw. Warrendale, PA: TMS Conference Proceedings, 2003.

2. Keller, R. R., A. Roshko, R. H. Geiss, K. A. Bertness, and T. P. Quinn. “EBSD measurement of strains in GaAs due to oxidation of buried AlGaAs layers.” Microelectronic Engineering 75, 96-102(2004).

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Figure 4. Microdiffraction methods to be used in SEM for high resolution, quantitative strain mapping. Electrons form the incident beam in all cases. EBSD: scattered electrons detected (~ 10 – 100 nm resolution, > 0.1 % strain); Kossel: scattered X-rays detected (~ (0.1 to 1) mm resolution, > 0.01 % strain); pseudo-Kossel: electrons generate X-rays in target, causing X-rays from specimen (~ (1 to 10) mm resolution, > 0.01 % strain).

 

Figure 5. . EBSD image quality map, showing differences in strain in alternating GaAs/AlGaAs layers, with resolution approaching 10 nm. Amorphous oxide interlayer causes strain in adjacent crystalline layers.
 

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