Magnetodynamics

Goals

Mike Schneider next to cryogenic and room-temperature pulsed inductive microwave magnetometers.

This project develops instruments, techniques, and theory for the understanding of the high-speed response of commercially important magnetic materials. Techniques used include linear and nonlinear magneto-optics and pulsed inductive microwave magnetometry. Emphasis is on high-frequency (above 1 gigahertz), time-resolved measurements for the study of magnetization dynamics under large-field excitation. Research addresses the nature of coherence and damping in ferromagnetic systems and their effects on the fundamental limits of magnetic data storage. Research on spin-electronic systems and physics concentrates on spinmomentum-transfer oscillators (see section on Spin Electronics) and nuclear spin polarization in semiconductors. The project provides results of interest to the magnetic disk drive industry, developers of magnetic random-access memory, and the growing spin-electronics community.

Customer Needs

Advances in magnetic information storage are vital to economic growth and U.S. competitiveness in the world market for computer products and electronic devices. Our primary customers are the magnetoelectronics industries involved in the fabrication of magnetic disk drives, magnetic sensors, and magnetic random-access memory (MRAM).

Data-transfer rates are increasing at 40 percent per year (30 percent from improved linear bit density, and 10 percent from greater disk rotational speed). The maximum data-transfer rate in nanometric devices is currently 200 megabytes per second, with data-channel performance of over 1 gigahertz (in the microwave region), with corresponding magnetic switching times of less than 1 nanosecond. At these rates, a pressing need exists for an understanding of magnetization dynamics, and measurement techniques are needed to quantify the switching speeds of commercial materials.

The current laboratory demonstration record for storage density is over 30 gigabits per square centimeter (200 gigabits per square inch). How much further can longitudinal media (with in-plane magnetization) be pushed? Can perpendicular recording, patterned media with discrete data bits, or heatassisted magnetic recording extend magnetic recording beyond the superparamagnetic limit at which magnetization becomes thermally unstable? We are developing the necessary metrology to benchmark the temporal performance of new methods of magnetic data storage.

Use of polarized spins in semiconductors is a new direction in electronics that promises to revolutionize telecommunications and information processing. It is based on the manipulation and control of the quantum-mechanical spin of a semiconductor's charge carrier. It holds the promise of extending telecommunications frequencies into the terahertz regime. The frequency performance of conventional devices based on charge transfer is limited by electron velocities, charge-transfer times, and carrier mobilities, whereas the electron spin has no fundamental frequency limitation as long as coherence can be preserved. The electron-spin degree of freedom forms the most fundamental quantum oscillator.

Technical Strategy

Nanomagnetodynamics — Our technical strategy is to identify future needs in the data-storage and other magnetoelectronic industries, develop new metrology tools, and do the experiments and modeling to provide data and theoretical underpinnings. We concentrate on two major problems in the magnetic-data-storage industry: (1) data-transfer rate, the problem of gyromagnetic effects, and the need for large damping without resorting to high fields, and (2) storage density and the problem of thermally activated reversal of magnetization. This has led to the development of instrumentation and experiments using magneto-optics and microwave circuits. Microwave coplanar waveguides are used to deliver magnetic-field pulses to materials under test. In response, a specimen's magnetization switches, but not smoothly. Rather, the magnetization vector undergoes precession. Sometimes, the magnetization can precess nonuniformly, resulting in the generation of spin waves or, in the case of small devices, incoherent rotation. We use several methods to detect the state of magnetization as a function of time. These include the following:

While these instruments have immediate use for the characterization of magnetic data-storage materials, they are also powerful tools for the elucidation of magnetodynamic theory. The primary mathematical tools for the analysis of magnetic switching data are essentially phenomenological. As such, they have limited utility in aiding industry in its goal to control the high-speed switching properties of heads and media. We seek to provide firm theoretical foundations for the analysis of time-resolved data, with special emphasis on those theories that provide clear and unambiguous predictions that can be tested with our instruments.

Polarized Spins in Semiconductors — The spin precession of charge carriers in semiconductor hosts has significant potential for telecommunications applications. Unlike the case of conventional semiconductor switching, the frequency of spin precession is not fundamentally limited by the physical thickness of dielectric spacers. We are investigating optically generated spin populations in semiconductors and novel magnetic/semiconductor heterostructures of interest to the telecommunications industry. To enable future applications of polarized spins in semiconductors, such as ultrahigh-frequency oscillators, our goal is to obtain and measure coherent spin dynamics in metal/semiconductor heterostructures.

Recent advances in spin-based semiconductor devices have demonstrated that coherent spin precession can be maintained for hundreds of nanoseconds in III-V semiconductors and hundreds of microseconds in silicon. The precession frequency can be controlled by applied magnetic fields, gate voltages, and modulation doping techniques. Terahertz precession has been observed in Mn-doped InAs heterostructures with no applied magnetic fields. Modulation of the electron g-factor has been observed in the presence of electric fields that move the spin packets between regions of different g-factors, e.g., GaAs and AlGaAs.

We are investigating methods of measuring small numbers of spins in semiconductor devices and spin traps. Developing this metrology will be essential to the development of methods to control and manipulate small numbers of spins in a spin circuit. We have developed a pulsed-laser technique to pump and probe spin populations in semiconductors at cryogenic temperatures. The spin population is measured using the rotation of linear polarized light that is transmitted through a bulk sample. In addition to exploring spin dynamics in semiconductors, we are studying metallic devices that use spin-momentum transfer to induce coherent precession (see section on Spin Electronics).

Accomplishments

Rotatable anisotropy Hk(0) for Permalloy, as a function of film thickness δ. The linear dependence on inverse film thickness is evidence that the rotatable anisotropy is a surface effect. The presence of such rotatable anisotropy enhances the bandwidth of ultrathin Permalloy layers, but at the expense of the susceptibility.

Hyperfine field HN and effective nuclear temperature TN for dynamic nuclear polarization in GaAs. The hyperfine field is quenched near zero applied field, then reverses sign as field is swept through zero. These results indicate that the nuclear spin system is adiabatically cooled as the applied field is ramped to zero. The reversal of the hyperfine field is a direct result of the adiabatic nature of the measurement.


Pump-probe Faraday magnetometer for measurement of spintronic properties in GaAs. Pulsed laser diodes are used for these measurements instead of modelocked Ti:sapphire lasers, greatly reducing cost and complexity of the completed instrument.

Vector-resolved, time-domain SH-MOKE signal for magnetization dynamics in Permalloy measured at low applied bias field Hb at which the damping is significantly enhanced. The data show no substantial evidence of inhomogeneities during the magnetization switching process, demonstrating that spin-wave generation does not explain the enhancement of damping for this particular experimental geometry.

Award



Technical Contact:
Tom Silva

Staff-Years (FY 2005):
2 professionals
3 research associates
1 guest researcher

Previous Reports:
2004
2002
2001

Magnetics Publications

NIST
Electromagnetics Division
325 Broadway
Boulder, CO 80305-3328
Phone 303-497-3131
Fax 303-497-3122

April 22, 2005

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