This project develops complementary metrology methods of nonlinear optical analysis, near-field optical spectroscopy, confocal microscopy, time-resolved photoluminescence, and X-ray diffraction analysis for studies of optical, electronic, and structural properties of compound semiconductor materials and structures. Its current focus is bulk and thin-film III nitrides, quantum nanowires, and nitride device structures. It also develops prototype nanowire devices.

Project Members:
Norman Sanford, Project Leader
Paul Blanchard
Todd Harvey
Aric Sanders
John Schlager