This project develops complementary metrology methods of nonlinear optical analysis, near-field optical spectroscopy, confocal microscopy, time-resolved photoluminescence, and X-ray diffraction analysis for studies of optical, electronic, and structural properties of bulk and thin-film III nitrides, quantum nanowires, and nitride device structures. It develops prototype nanowire devices. The project is also accumulating a database of refractive index and birefringence for AlGaN and InGaN alloy semiconductors and rare-earth-doped III-nitrides.

Project Members:
Norman Sanford, Project Leader
Paul Blanchard
Todd Harvey
Bob Hickernell
Aric Sanders
John Schlager