NAMBE 2003

WORKSHOPS

At NAMBE 1999, there were a series of three workshops on the Thursday immediately following the main part of the conference. These workshops proved very popular, and we'd like to have another three workshops in 2003, focused on three important topics for the MBE community. The workshops will be held on Thursday, October 2nd, from 8 AM until 3 PM. Please contact the Workshop Chairman for additional information.

Workshop 1:   Production of Next-Generation MBE Materials

Workshop 2:   Long Wavelength Optoelectronics

Workshop 3:   MBE for Quantum Information
Workshop 1:   Production of Next-Generation MBE Materials

Organizer:
Thomas R. Block
Northrop Grumman Space Technology

This workshop will explore moving next-generation MBE materials into production. The format of the workshop will be presentations by experts in the different materials followed by group discussions. Each speaker will address the following topics in their presentation:

  • Advantages of new materials over existing production technologies
  • Applications and opportunities for new materials
  • Significant growth-mechanics related challenges remaining
  • Equipment improvements desirable for production

The final portion of the workshop will follow up previous workshops on in-situ measurement and safety.

Time
Topic
Speaker
8:00 to 8:10 Opening remarks Thomas Block
8:10 to 8:50 GaN for electronics Ben Heying
8:50 to 9:30 Sb materials for electronics Brian Bennett
9:30 to 9:50 Break  
9:50 to 10:30 Novel III-Vs for solar cells Aaron Ptak
10:30 to 11:10 Metamorphic growth Joel Fastenau
11:10 to 11:50 Dilute nitrides Henning Riechert
11:50 to 1:00 Lunch  
1:00 to 1:40 In-situ monitoring and control in MBE Paul Pinsukanjana
1:40 to 2:20 Absolute calibration standards Kris Bertness
2:20 to 2:50 Phosphorous maintenance safety Thomas Block

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Workshop 2:   Long Wavelength Optoelectronics

Chairman:
Yong-Hang Zhang
Arizona State University

The Long Wavelength Optoelectronics Workshop offers a great forum for the MBE growth of optoelectronic materials and devices. More emphasis will be placed on the growth and materials related issues, new approaches for their improvement, and device concepts. It will be organized in two serial sessions, I) Near IR Session, which will cover the wavelengths up to 2 micron; ii) MWIR and Beyond, which covers from 2 micron up to THz radiation. The workshop will be casual and stimulating. We strongly encourage every attendee, from university graduate students to senior researchers, to actively participate. A preliminary program is listed below for your information. We currently are still accepting submissions. Please submit the title with a brief abstract less than 100 words of your tentative talks to Prof. Yong-Hang Zhang at yhzhang@asu.edu. The deadline for the submission will be 9/15/03.

Post Deadline Paper Session

Time
Topic
Speaker
8:00 AM Combined X-ray Diffraction/Scanning Tunneling Microscopy Study of Segregation and Interfacial Bonding in Type-II Heterostructures M. Zhong(a), J. Steinshnider(a), and M. Weimer(a), R. Kaspi(b), (a)Texas A&M University; (b)Air Force Research Laboratory, Kirtland AFB
8:15 AM HR-TEM analysis of InAs quantum dashes grown on a GaAs substrate using AlGaAsSb metamorphic buffers, Ganesh Balakrishnan, Shenghong Huang, L.R.Dawson and D.L.Huffaker, University Of New Mexico.
8:30 AM Electrical and Optical Performance of InAs/GaSb Short Period Superlattice LWIR PIN Diodes, G.J. Sullivan(a), J. Bergman(a), R.E. De Wames(a), J.R. Waldrop(a), C. Grein(b) and M. Flatte©, (a)Rockwell Scientific Co., Thousand Oaks, CA 91360; (b)Univ. of Illinois at Chicago; (c) Univ. of Iowa
8:45 AM The Use of Transmission Electron Microscopy (TEM) in the Characterization of GaInNAs(Sb) Quantum Well Structures Grown by MBE, Tihomir Gugov, Vincent Gambin, Mark Wistey, Homan Yuen, Seth Bank, James S. Harris Jr., Stanford University

LW Optoelectronics Workshop (same room)

Near IR Session:
Time
Topic
Speaker
9:00 AM GaInNAsSb, A New Material in the Quest for Communication Lasers James Harris, Stanford University.
9:30 AM MBE Growth of Dilute Nitrides for Long Wavelength Optoelectronics James Gupta, NRC, Canada.
10:00 AM Long Wavelength GaAsSb/GaAs VCSEL on GaAs Substrate Shane Johnson, S. Chaparro, P. Dowd, et. al., Arizona State University and Lytek Corporation.
10:30 AM Recent Achievements in MBE Technology of Long-Wavelength (1.3 -1.5 um) Quantum Dot Lasers Based on GaAs A.R.Kovsh, A.F.Ioffe Physico-Technical Institute, 194021, St.Petersburg, Russia. Industrial Technology Research Institute, 310, Hsinchu, Taiwan, ROC.
11:00 AM Dilute nitrides, Henning Riechert, Infineon Technologies at our sister workshop:

Production of next-generation MBE materials (In a different conf room)

 
11:45 PM Lunch Break  

MWIR and Beyond:

Time
Topic
Speaker
1:00 PM
"MBE Growth of THz Quantum Cascade Lasers on GaAs", John Reno, Sandia National Lab.
1:30 PM "Growth of Antimonide-Based Interband Cascade Lasers on Gallium Arsenide Substrates", Cory J. Hill, Baohua Yang, and Rui Q. Yang, Jet Propulsion Laboratory, California Institute of Technology.
1:00PM
"MBE Growth of Mid-infrared IV-VI Lead-Salt QW VCSEL", 		Z. Shi, F. Zhao, A. Majumda, H. Z. Xu, X. Lu, L. Jayasinghe, S. Khosravani, V. Kelkar, R. Singh, D. Ray, University of Oklahoma.
2:30 PM
"Room Temperature CW Operation of 2.1 um Quantum Well Lasers Grown on GaSb", 		Y. Cao, S. Yu, X. Jin, D. Ding, J. Wang, S. Johnson, and Y.-H. Zhang, Arizona State University.

2:50PM 		Open session for free discussion.  

3:05 PM		 The Workshop adjourns  

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Workshop 3:   MBE for Quantum Information


Co-Chairmen:

Richard Mirin
NIST
Nitin Samarth
Penn State

This workshop will focus on new materials and devices for Quantum Information. Materials such as dilute magnetic semiconductors and quantum dots will be discussed. Important topics of discussion will include what advances need to be made in MBE growth in order to advance the area of Quantum Information.

The files linked to below are in PDF format and will require Adobe Acrobat Reader to open. Some of them are quite large and may take a while to download.

Time
Topic
Speaker
800-845 AM An Introduction to Quantum Information Technologies: A Range From "You Can Buy It Now" to "Can It Ever Be Done? Michael Flatte, University of Iowa
845-930: Semiconductor Nanostructures for Quantum Information Technology Tom Reineicke, Naval Research Labs
930-1015: Oxide-Semiconductor Materials for Quantum Computation Jeremy Levy, University of Pittsburg
1015-1035: Coffee Break  
1035-1120: Epitaxial Materials for Solid State Quantum Computing Applications Dave Pappas and John Martinis, NIST
1120 AM -1205 PM Molecular Beam Epitaxy Challenges from Quantum Information Technologies Michael Flatte, University of Iowa
1205-130 PM Lunch  
130-300 PM Panel Discussion: Moderator-Richard Mirin  

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NIST Optoelectronics Division
NIST Optoelectronics Manufacturing Group
NIST Nanostructure Fabrication and Metrology Project

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